inchange semiconductor isc product specification isc silicon npn power transistor BUX47A description collector-emitter sustaining voltage- : v ceo(sus) = 450v (min) fast switching speed applications designed for high voltage, fast switching applications. absolute maximum ratings(ta=25 ) symbol parameter value unit v cer collector-emitter voltage (r be = 10 ) 1000 v v ces collector-emitter voltage (v be = 0) 900 v v ceo collector-emitter voltage 450 v v ebo emitter-base voltage 7 v i c collector current-continuous 9 a i cm collector current-peak t p < 5ms 15 a i b b base current-continuous 8 a i bm base current-peak t p < 5ms 10 a p c collector power dissipation @t c =25 125 w t j junction temperature 175 t stg storage temperature range -65~175 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.2 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BUX47A electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.2a; i b = 0; l= 25mh 450 v v (br)ebo emitter-base breakdown voltage i e = 50ma; i c = 0 7 30 v v ce (sat)-1 collector-emitter saturation voltage i c = 5a; i b = 1a b 1.5 v v ce( sat)-2 collector-emitter saturation voltage i c = 8a; i b = 2.5a b 3.0 v v be (sat) base-emitter saturation voltage i c = 5a; i b = 1a b 1.6 v i cer collector cutoff current v ce = 850v; r be = 10 v ce = 850v; r be = 10 ; t c =125 0.4 3 ma i cev collector cutoff current v ce =850v; v be = -2.5v v ce =850v; v be = -2.5v; t c =125 0.15 1.5 ma i ebo emitter cutoff current v eb = 5v; i c = 0 1.0 ma switching times resistive load t on turn-on time 0.7 s t s storage time 3.0 s t f fall time i c = 5a; i b1 =-i b2 = 1a; v cc = 150v 0.8 s isc website www.iscsemi.cn
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